IKD04N60RATMA1

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Номер частини: IKD04N60RATMA1

Виробник: Infineon Technologies

Категорії: IGBT Transistors

RoHS

Таблиця даних: IKD04N60RATMA1

Опис: IGBT Transistors IGBT w/ INTG DIODE 600V 8A

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Технічні характеристики

Виробник: Infineon Technologies

Категорії: IGBT Transistors

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.65 V

Configuration: Single

Continuous Collector Current at 25 C: 8 A

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Mounting Style: SMD/SMT

Package / Case: TO-252-3

Packaging: Cut Tape, MouseReel, Reel

Pd - Power Dissipation: 75 W

Series: Trenchstop RC

Technology: SI

Категорія Porduct

Останні відгуки

Напишіть свій власний Reivew

Quick delivery. Secure packing. Excellent product. Thank you

BHADRESH PATEL

Quickly came to CET, all in one package. Look at the rules

Earl Sault

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

Sergio Garcia Carreon

Works. Find the price of this product is very good

Maxim Krasnov

Goods came in two weeks. Well packed. Track number tracked

kwon yong sik

Більше

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