IKD06N60RATMA1

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Номер частини: IKD06N60RATMA1

Виробник: Infineon Technologies

Категорії: IGBT Transistors

RoHS

Таблиця даних: IKD06N60RATMA1

Опис: IGBT Transistors IGBT w/ INTG DIODE 600V 12A

Цитата PCB Отримати ціну зараз!

Технічні характеристики

Виробник: Infineon Technologies

Категорії: IGBT Transistors

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.65 V

Configuration: Single

Continuous Collector Current at 25 C: 12 A

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Mounting Style: SMD/SMT

Package / Case: TO-252-3

Packaging: Cut Tape, MouseReel, Reel

Pd - Power Dissipation: 100 W

Series: Trenchstop RC

Technology: SI

Категорія Porduct

Останні відгуки

Напишіть свій власний Reivew

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

Dane Gogic

Thank You all fine, packed very well

Ulrich Bundke

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

Andrzej Piwowarczyk

fast delivery

Mike Ibarra

goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!

Kathrin Leibfritz

Більше

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