TPH3205WSBQA

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Номер частини: TPH3205WSBQA

Виробник: Transphorm

Категорії: MOSFET

RoHS

Таблиця даних: TPH3205WSBQA

Опис: MOSFET GAN FET 650V 35A TO247

Цитата PCB Отримати ціну зараз!

Технічні характеристики

Виробник: Transphorm

Категорії: MOSFET

Channel Mode: Enhancement

Id - Continuous Drain Current: 35 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Mounting Style: Through Hole

Number of Channels: 1 Channel

Package / Case: TO-247-3

Packaging: Tube

Pd - Power Dissipation: 125 W

Qg - Gate Charge: 42 nC

Qualification: AEC-Q101

Rds On - Drain-Source Resistance: 62 mOhms

Technology: GaN

Transistor Polarity: N-Channel

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs - Gate-Source Voltage: - 18 V, + 18 V

Vgs th - Gate-Source Threshold Voltage: 1.6 V

Категорія Porduct

Останні відгуки

Напишіть свій власний Reivew

Thank You all fine, packed very well

Ulrich Bundke

Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery

Andrzej Piwowarczyk

fast delivery

Mike Ibarra

goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!

Kathrin Leibfritz

The timer is running. 10 PCS. Packed properly.

Karina Erdmann

Більше

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